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d a t a sh eet preliminary speci?cation 2000 sep 05 discrete semiconductors kmi18/2 integrated rotational speed sensor 4 .com u datasheet
2000 sep 05 2 philips semiconductors preliminary speci?cation integrated rotational speed sensor kmi18/2 features open collector output for active target wheel application wide air gap zero speed capability wide temperature range insensitive to vibration. description the kmi18/2 sensor detects rotational speed of active target wheels with magnetic reference marks. it consists of a magnetoresistive sensor element, an integrated circuit for signal conditioning and a ferrite magnet. the frequency of the digital voltage output signal is proportional to the rotational speed of the target wheel. an open collector output gives high flexibility in the design of the subsequent signal conditioning electronics. pinning caution do not press two or more products together against their magnetic forces. do not expose products to strong magnetic ?elds of more than 30 ka/m. pin symbol description 1v cc dc supply voltage 2 out open collector output 3 gnd ground handbook, halfpage mbl224 123 b1 b2 b3 b4 123 fig.1 simplified outline (sot477a). quick reference data note 1. maximum power consumption according to power derating curve, see fig.3. symbol parameter conditions min. typ. max. unit v cc dc supply voltage t amb = - 40 to +150 c 4.5 5 16.5 v i cc dc supply current v cc =5v 6 7 10 ma h ylh magnetic threshold for lh edge 100 250 400 a/m h yhl magnetic threshold for hl edge - 400 - 250 - 100 a/m t amb ambient operating temperature v cc = 5 v; note 1 - 40 - +150 c 4 .com u datasheet
2000 sep 05 3 philips semiconductors preliminary speci?cation integrated rotational speed sensor kmi18/2 limiting values in accordance with absolute maximum rating system (iec 60134); t amb = - 40 to +150 c; see fig.4. notes 1. low: transistor open (v ce < 1 v). 2. high: transistor closed (v ce > 4 v). characteristics t amb =26 10 c; v cc =5v; f rm = 0 to 25000 hz; magnetic reading point according to package outline; unless otherwise speci?ed. symbol parameter conditions min. max. unit v cc dc supply voltage not protected against incorrect polarity - 0.5 +16.5 v v out output voltage not protected against incorrect polarity - 0.5 +24 v i out(max) maximum output current low state; note 1 - 20 ma i out(high) output leakage current high state; note 2; see fig.5 - 100 m a high state; note 2; see fig.6 - 100 m a p tot total power dissipation v cc = 16.5 v; i out =20ma - 300 mw t amb ambient operating temperature v cc =5v - 40 +150 c t stg storage temperature - 40 +150 c t sld soldering temperature t 10 s - 260 c symbol parameter conditions min. typ. max. unit sensor characteristics h ylh magnetic trigger ?eld strength (threshold) for lh-output edge t amb =25 c 100 250 400 a/m t amb = - 40 to +150 c - 200 +250 +600 a/m h yhl magnetic trigger ?eld strength (threshold) for hl-output edge t amb =25 c - 400 - 250 - 100 a/m t amb = - 40 to +150 c - 600 - 250 +200 a/m h y0 magnetic offset - 150 - +150 a/m h yh magnetic trigger hysteresis 100 500 700 a/m h x auxiliary magnetic ?eld strength 5 8 10 ka/m f rm frequency of magnetic reference marks 0 - 25000 hz supply conditions i cc dc supply current t amb =26 10 c; v cc =5v 6.5 7.5 8.5 ma t amb = - 40 to +150 c; v cc =5v 6710ma v cc dc supply voltage t amb = - 40 to +150 c 4.5 5 16.5 v signal output characteristics transfer behaviour change of magnetic reference ?eld h y ns ? hl sn ? lh power-on state unde?ned i out output current low state; note 1 0.1 - 20 ma 4 .com u datasheet
2000 sep 05 4 philips semiconductors preliminary speci?cation integrated rotational speed sensor kmi18/2 notes 1. low: transistor open (vce < 1 v). 2. high: transistor closed (vce > 4 v). 3. higher magnetic fields could cause irreversible shifts of parameters. 4. output pins are designed for electrostatic sensitivity with field strengths up to 2 kv according to human body model (hbm), mil-std-883, method 3015. 5. mr pins are designed for electrostatic sensitivity with field strengths up to 0.3 v according to human body model (hbm), mil-std-883, method 3015. i out(high) output leakage current high state; note 2; see fig.6 -- 100 m a v out output saturation voltage t amb = - 40 to +150 c; low state; note 1 i out = 1 ma 0.01 0.03 0.1 v i out = 10 ma 0.1 0.2 0.5 v i out = 20 ma 0.3 0.5 1 v t r(out) output signal rise time low 10% to high 90%; see fig.7 51220 m s t f(out) output signal fall time high 90% to low 10%; see fig.7 0.05 0.5 1 m s t df(out) output signal delay time of hl-edge 1.5 2.5 3.5 m s d tdf(out) jitter measured in harmonic magnetic ?eld in y with h y(max) = 1 ka/m; normalized to cycle of one reference mark 0 - 0.15 % environmental conditions external magnetic in?uence note 3 -- 30 ka/m esd protection of sensor pins v cc , out and gnd compliance to iec 0801-2 (iv); note 4 2 -- kv esd protection of internal pins b1, b2, b3 and b4 compliance to iec 0801-2 (iv); note 5 0.3 -- kv emc: compliance to iso 11452-5 a; stripline; 300 v/m; 10 khz to 400 mhz; 1500 mm interference for pulse: iso 7637; pulse 4 t=25 c; harmonic magnetic ?eld in y with h y(max) = 1 ka/m and f m =50hz function a capacity of sensor shield c s shield capacity b1 vs. b2 of mr bridge; f = 1 mhz; u osc = 200 mv 37 43 48 pf symbol parameter conditions min. typ. max. unit 4 .com u datasheet
2000 sep 05 5 philips semiconductors preliminary speci?cation integrated rotational speed sensor kmi18/2 functional description the kmi18/2 is sensitive to the rotation of an active target wheel with magnetic reference marks. the functional principle is shown in fig.8. because of the sensor layout and setup of the measuring system, only movements of reference marks in the y-direction will be sensed (coordinate system see fig.2). the electrical output signal of the sensor is amplified, temperature compensated and applied to a schmitt trigger in the signal conditioning circuit (see fig.9). an additional housing separates the conditioning circuitry from the magnetorestive sensor element, thereby ensuring optimal sensor performance at high temperatures. the signal level of the digital output is independent from the sensing distance within the measuring range. its frequency equals that of the reference marks on the target wheels (1) . an open collector voltage interface ensures accurate transmission (three wires) of the digital sensor signal to the subsequent signal conditioning electronics. (1) see relevant application notes for speci?c target wheel data. handbook, halfpage y z xx ic sensor magnet with direction of magnetization mbl227 123 fig.2 component detail and coordinate system. 4 .com u datasheet
2000 sep 05 6 philips semiconductors preliminary speci?cation integrated rotational speed sensor kmi18/2 handbook, halfpage 0 50 100 200 t amb ( c) 400 300 p tot (mw) 100 0 200 150 mbl226 fig.3 power derating curve. handbook, halfpage mbl218 sensor i cc v cc i out v out fig.4 supply and output. handbook, halfpage mbl219 sensor v cc v cc v out v i out fig.5 leakage current test circuit: v cc to out. handbook, halfpage mbl220 sensor v cc v out 5 v 24 v v v i out fig.6 leakage current test circuit: out to gnd. 4 .com u datasheet
2000 sep 05 7 philips semiconductors preliminary speci?cation integrated rotational speed sensor kmi18/2 handbook, halfpage mbl225 2.7 k w 10 k w 2 nf sensor v cc v out i cc fig.7 test and application circuit with additional ceramic capacitor. handbook, full pagewidth n output signal moving direction of the sensor magnetized target s mbl236 sn ns sn ns y z fig.8 functional principle. 4 .com u datasheet
2000 sep 05 8 philips semiconductors preliminary speci?cation integrated rotational speed sensor kmi18/2 handbook, full pagewidth schmitt trigger amplifier sensor voltage control v cc gnd out open collector output mgt539 fig.9 block diagram. 4 .com u datasheet
2000 sep 05 9 philips semiconductors preliminary speci?cation integrated rotational speed sensor kmi18/2 package outline unit b p c q l 2 l 1 v references outline version european projection issue date iec jedec eiaj mm 1.7 1.4 0.8 0.7 b p1 1.57 1.47 5.7 5.5 4.1 3.9 0.3 0.24 1.2 0.9 3.9 3.5 m 1 3.9 3.7 m 2 2.1 1.9 m 3 (1) 0.9 0.75 l 7.55 7.25 d (2) d 1 (2) 4.5 4.3 e (2) 5.7 5.5 4.6 4.4 e 1 (2) 18.2 17.8 h e 5.6 5.5 h e1 k max. 1.67 e 2.35 2.15 e 1 0.25 0.75 0.65 dimensions (mm are the original dimensions) sot477a 00-08-31 0 2.5 5 mm scale a (1) plastic single-ended multi-chip package; magnetized ferrite magnet (3.8 x 2 x 0.8 mm); 4 interconnections; 3 in-line leads sot477a e e 1 h e1 l 1 d l b p1 d 1 h e m 1 m 3 k notes 1. glue thickness not included. 2. plastic or metal protrusions of 0.15 mm maximum per side are not included. c v m ab v m ab q a m 2 b a sensor die position * centre of reading point e 123 e 1 l 2 b p 4 .com u datasheet
2000 sep 05 10 philips semiconductors preliminary speci?cation integrated rotational speed sensor kmi18/2 data sheet status note 1. please consult the most recently issued data sheet before initiating or completing a design. data sheet status product status definitions (1) objective speci?cation development this data sheet contains the design target or goal speci?cations for product development. speci?cation may change in any manner without notice. preliminary speci?cation quali?cation this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. product speci?cation production this data sheet contains ?nal speci?cations. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 4 .com u datasheet
2000 sep 05 11 philips semiconductors preliminary speci?cation integrated rotational speed sensor kmi18/2 notes 4 .com u datasheet
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 2000 70 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, marketing communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 20052 monza (mi), tel. +39 039 203 6838, fax +39 039 203 6800 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5057 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland : al.jerozolimskie 195 b, 02-222 warsaw, tel. +48 22 5710 000, fax. +48 22 5710 001 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 58088 newville 2114, tel. +27 11 471 5401, fax. +27 11 471 5398 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 5f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2451, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 60/14 moo 11, bangna trad road km. 3, bagna, bangkok 10260, tel. +66 2 361 7910, fax. +66 2 398 3447 turkey: yukari dudullu, org. san. blg., 2.cad. nr. 28 81260 umraniye, istanbul, tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 208 730 5000, fax. +44 208 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 3341 299, fax.+381 11 3342 553 printed in the netherlands 613520/01/pp 12 date of release: 2000 sep 05 document order number: 9397 750 07254 4 .com u datasheet

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